LED Lighting
fecha:2011-05-16 11:56
estado:para resolver
pregunta:admin
Edit this paragraph LED lighting principle:
LED is Ⅲ - Ⅳ compound, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphorus) and other semiconductor processing, and its core is PN junction. Therefore, it has the general characteristics of PN junction of the IN, ie the forward and reverse cut-off, breakdown characteristics. In addition, certain articles
Conditions, it also has light-emitting properties. In the forward voltage, electron injection from the P N
mejor respuesta:
no hay por el momento
[todas las respuestas(0)]
[contesto]
1/4 la página próxima la página anterior la primera página la última página
volver
refrescar
WAP página de inicio
versión de web
iniciar sesión
02/06 19:10