Taiwanese scientists develop high-efficiency silicon LED heterostructure
fecha:2010-11-24 16:04
t room temperature external quantum efficiency as high as 4.3 10-4, is when the bulk silicon substrate 100 times, speculation about the internal quantum efficiency of 10-3, breaking an indirect band semiconductor restrictions.
It is worth mentioning that this component of process and structure with the current VLSI technology is completely compatible, can be directly integrated circuits which in the present. Results of this study is expected to optical integrated circuits used in connection (o
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